晶界特征對316不銹鋼沿晶應力腐蝕開裂裂紋萌生的影響
發(fā)布人：上海艾荔艾金屬材料有限公司m.85978597.cn
更新時間：2016-01-05
研究了晶界結構特征及晶界 2 側晶粒的變形難易程度(Schmid 因子)對 316 不銹鋼(316SS)不同晶界萌生應力腐蝕開裂(SCC)裂紋的影響. 通過形變及熱處理工藝獲得晶粒尺寸較大的樣品, 制作成薄樣品, 使樣品厚度相當于一個晶粒的尺寸. 采用三點彎曲加載方式, 在沸騰的酸化 NaCl 溶液中進行 SCC 實驗來研究 316SS 不同晶界萌生 SCC 裂紋的傾向性.
晶界特征對316不銹鋼沿晶應力腐蝕開裂裂紋萌生的影響EFFECTS OF GRAIN BOUNDARY CHARACTER ON INTERGRANULAR?STRESS CORROSION CRACKING INITIATION IN 316 STAINLESS STEEL
研究了晶界結構特征及晶界 2 側晶粒的變形難易程度(Schmid 因子)對 316 不銹鋼(316SS)不同晶界萌生應力腐蝕開裂(SCC)裂紋的影響. 通過形變及熱處理工藝獲得晶粒尺寸較大的樣品, 制作成薄樣品, 使樣品厚度相當于一個晶粒的尺寸. 采用三點彎曲加載方式, 在沸騰的酸化 NaCl 溶液中進行 SCC 實驗來研究 316SS 不同晶界萌生 SCC 裂紋的傾向性. 結果表明, 沿晶型的 SCC 裂紋在隨機晶界處萌生的傾向性最高, 而在 Σ3 晶界處的SCC 裂紋萌生傾向性很低. 分別統(tǒng)計了大量隨機晶界和 Σ3 晶界 2 側晶粒的 Schmid 因子及其差值的絕對值(△m), 結果表明, 隨機晶界數(shù)量隨△m 值的變化規(guī)律不明顯, Σ3 晶界數(shù)量隨△m 值增大明顯下降; 在 0＜△m＜0.1 范圍內, 隨機晶界和 Σ3 晶界萌生 SCC 裂紋的傾向性都隨著△m 的增加而增加.?
316stainless steel (316SS) is widely used due to a combination of good mechanical properties and?excellent corrosion resistance. However, the intergranular stress corrosion cracking (IGSCC) is a serious problem?for 316SS exposed to aggressive environments, which could result in unexpected failures and lead to huge losses.?The grain boundary structure and local stress applied on the grain boundary are proved to have significant?influence on the initiation of the IGSCC. In this work, thermal-mechanical processing was applied to the 316SS to?yield a large-grained sample. The sample plates with a single-grained thickness were subjected to three-points?bending SCC tests in an acidified boiling 25%NaCl solution. The result shows that the random grain boundaries?(GBs) have the highest propensity to IGSCC initiation, while the Σ3 GBs shows very low tendency to IGSCC?initiation. The absolute values of Schmid factor mismatch (△m) between the grains on both sides of the GBs were?analyzed for a large number of GBs. The distribution of the △m for the Σ3 GBs is obviously different from that of?the random GBs. The △m has significant influence on the IGSCC susceptibility in the range of 0＜△m＜0.1. The?larger value of the △m, the higher propensity for the IGSCC initiation at the GBs, for both the random GBs and?the Σ3 GBs.?
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